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Время электроники Среда, 22 мая

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США официально признали Huawei угрозой нацбезопасности

Обзоры, аналитика

Интервью, презентации


IR предлагает супервизор для контроля в реальном времени DC-DC преобразователей

IR3721 изготовлена по фирменной [[технологии TruePower™]], позволяет в реальном времени, с точностью 2.5% при 65°C, контролировать напряжение на входе и выходе DC-DC преобразователей, используемых в ноутбуках, настольных компьютерах и экономичных серверах [англ.]

TPS2550 и TPS2551 – схемы защиты источников питания от коротких замыканий при подключении USB

Texas Instruments предлагает две микросхемы - TPS2550 и TPS2551, для [[защиты источников питания]] от коротких замыканий, часто возникающих при подключении USB разъемов к сотовым телефонам, ноутбукам, LCD TV, телевизионным приставкам, игровым консолям или IP телефонам [англ.]

Tyco предлагает фильтры для трехфазных цепей

Tyco Electronics выпустила новый ряд фильтров серии BCF для трехфазных сетей, в расширение Corcom RFI семейства


27 февраля

Первые в отрасли 900 В superjunction MOSFET

Infineon Technologies анонсировала на конференции APEC (Applied Power Electronics Conference, 24-28 февраля 2008, Остин, Техас) первые в отрасли 900 В [[superjunction MOSFET]], разработанные специально для использования в импульсных источниках питания (SMPS)


кономичные приборы из семейства CoolMOS™ преодолели так называемые «ограничения кремния» для мощных транзисторов и обеспечили альтернативу для высоковольтных приборов в стандартных TO (Transistor Outline) корпусах. Приборы имеют чрезвычайно низкий уровень статических и динамических потерь, величину RDS(on) 120, 340 и 1200 мОм в корпусах TO-247, TO-220, TO-220FP и D-PAK.


The Infineon CoolMOS family of power transistors uses an innovative technology approach to overcome the silicon limit, a characteristic of MOSFET semiconductors in which doubling of voltage blocking capability leads to a five-fold increase in RDS(on) (on-state resistance). In overcoming the silicon limit, the CoolMOS 900 V devices achieve the industry’s lowest RDS(on) per package type.

On-state resistances of 0.12 ohm in a TO-247 package, 0.34 ohm in a TO-220 package and 1.2 ohms in D-PAK packages are at least 75 percent lower than can be achieved in such packages using conventional 900 V MOSFETs. Because of the low RDS(on), the new CoolMOS 900 V devices can offer an FOM (figure-of-merit, calculated as on-state resistance times gate charge) as low as 34 ohms*nanocoulomb, which results in extremely low conduction, driving and switching losses, and leads to increased efficiency.

Expanded design possibilities in LCD TVs, PC «silverboxes,» solar power generation systems

The combination of high blocking voltage with low conduction and switching losses in the CoolMOS 900 V family enables designers to develop more efficient power system topologies for a wide range of applications. For example, quasi-resonant flyback designs for LCD TV power supplies can benefit from a higher flyback voltage, which provides a longer primary duty cycle with reduced peak current, true zero-voltage switching and significantly lower voltage stress on the secondary side.

Because of their very low on-resistance, a single CoolMOS 900 V products in a TO-220-FP package can be used in such a design, rather than the two or more TO-220-FP packages that must be used with conventional 900V MOSFETS. Compared to the most common solution today, which uses 600 V MOSFETs, a CoolMOS 900V solution gives a premium efficiency of more than 0.5 percent.

CoolMOS 900 V devices can be used to design «silverbox» PC power supplies with a single-transistor forward (STF) topology, achieving the required high output power while still being compliant with the «80 PLUS program,» an industry initiative to ensure that PC power supplies are at least 80 percent efficient.

The STF topology is easier to design, and has a simplified driver stage and reduced parts count, resulting in cost improvements without efficiency disadvantages, compared to such other solutions as two-transistor-forward topologies.

In solar power generating systems, more photovoltaic converter panels can be placed in series instead of in parallel if the MOSFET voltage is increased to 900 V. This series connection reduces cabling power losses and costs, with cabling costs alone cut by a factor of two when changing from 600 V to 900 V devices.

The new CoolMOS devices also allow improved design of PFC (Power Factor Correction) supplies and lighting ballasts, because they permit designers to accept a higher DC link or input voltage. For example, high-power applications that use three-phase PFC and PWM stages with DC link voltages of up to 750 V will see such benefits as higher power density from having the industry’s lowest RDS(on) in a small package, such as the TO-247.

Ballast designs for lamps that are fed from a three-phase mains supply, such as special discharge lamps used in comfort lighting and electronic lamp ballasts for street lights and greenhouse heating lamps, will also benefit from topologies based on the CoolMOS 900 V family.

Packaging, Availability and Price

CoolMOS 900 V family members will be available in several industry-standard packages, including best- in-class devices with RDS(on) of 120 mΩ, 340 mΩ and 1200 mΩ in TO-247, TO-220, TO-220FP and D-PAK packages, respectively. In addition, 500 mΩ, 800 mΩ and 1000 mΩ devices will be available.

Samples of the 340 mΩ device in TO-220, TO-220FP and TO-247 packages, and of the 1200 mΩ part in a D-PAK, are available now. The volume price for a best-in-class 120 mΩ part in a TO-247 package will be below US$3.50 (Euro 2.40).

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